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Part Number : HN2C01FEYTE85LF
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : HN2C01FEYTE85LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : HN2C01FEYTE85LF More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.10
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Polarity : NPN
Case/Package : SOT-563
Element Configuration : Dual
Max Collector Current : 150 mA
Gain Bandwidth Product : 60 MHz
Collector Base Voltage (VCBO) : 60 V
Collector Emitter Breakdown Voltage : 50 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty : 8216 In Stock
Applications : Grid infrastructure Test & measurement Power delivery
hFE Min : 120
Packaging : Tape & Reel (TR)
Transition Frequency : 60 MHz
Max Breakdown Voltage : 50 V
Max Power Dissipation : 100 mW
Emitter Base Voltage (VEBO) : 5 V
Collector Emitter Voltage (VCEO) : 250 mV
Collector Emitter Saturation Voltage : 100 mV
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